2N6661 DATASHEET PDF

2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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Silicon Storage Technology is a registered trademark of. Information contained in this publication regarding device datasheef and the like is provided only for your convenience and may be superseded by updates. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

GestIC is a registered trademarks of Microchip Technology.

KG, a subsidiary of Microchip Technology Inc. KG, a subsidiary of Microchip. Code protection is constantly evolving. Microchip disclaims all liability arising from this information and its use.

We at Microchip are committed to continuously improving the code protection features of our. Code protection does not. We at Microchip are committed to continuously improving the code protection features of our products. Buy from the Microchip Store.

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Microchip disclaims all liability. It is your responsibility to ensure that your application meets with your specifications. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in Datasgeet devices.

All other trademarks mentioned herein are property of their. Note the following details of the code protection feature on Microchip devices: Sampling Options Buy Now. Application Notes Download All.

New Jersey Semiconductor 2NN datasheet pdf

Please contact sales office if device weight 2n661 not available. Most likely, the person doing so is engaged in theft of intellectual property. Only show products with samples.

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New Jersey Semiconductor

Information contained in this publication regarding device. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated.

All other trademarks mentioned herein are property of their respective companies. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

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