IRF630 DATASHEET PDF

Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

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Copy your embed code and put on your site: IRF datasheet and specification datasheet Download datasheet. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.

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Body Diode Reverse Recovery Charge. This datasheet is subject to change without notice.

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. N-channel V – 0. Body Diode Reverse Recovery Time.

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IRF630 Datasheet

Soldering Recommendations Peak Temperature. View PDF for Mobile.

Static drain-source on resistance Figure Pulse width limited by safe operating area 2. Switching times test datssheet for resistive load Figure Repetitive Avalanche Current a. Pulsed Diode Forward Current a.

Contents Contents 1 Electrical ratings. Gate charge test circuit Figure Vishay Intertechnology Electronic Components Datasheet. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Capacitance variations Figure The maximum ratings related to soldering conditions are also marked on the inner box label.

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irf datasheet & applicatoin notes – Datasheet Archive

Single Pulse Avalanche Energy b. Operating Junction and Storage Temperature Range. V DS Temperature Coefficient. Elcodis is a trademark of Elcodis Company Ltd.

Repetitive Avalanche Energy a. Continuous Source-Drain Diode Current. Unclamped Inductive load test circuit Figure Safe operating area for TO Figure 3.

IRF Datasheet(PDF) – STMicroelectronics

The low thermal resistance. The TOAB package is universally preferred for all. Electrical characteristics Figure These packages have a Lead-free second level interconnect. Repetitive rating; pulse width limited by maximum junction temperature see fig.

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