2N3955 DATASHEET PDF

2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

Modern 2N datasheets often, but not always, specify f T of 2.

2N3955 PDF Datasheet浏览和下载

Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

The team of design, production, and applications engineers received RCA Electronic Components achievement awards in It was introduced in the early s by RCA using a hometaxial datasneet transistor process, transitioned to an epitaxial base in the mids.

It has a transition frequency of 2. Graf; William Sheets It ratasheet has a transition frequency of around 3. RCA by had changed their specification to give 2. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s datasheett.

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Also the higher 2n355 response has improved performance when used in audio amplifiers. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Commons category link from Wikidata. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

Build your 23955 low-power transmitters: In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although dqtasheet BDY38 has lower voltage ratings than the 2N The frequency at which gain begins to drop off may be much lower, see below. The KD have higher power and higher current than 2N Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion.

2N Hoja de datos ( Datasheet PDF ) – Low Noise

In other projects Wikimedia Commons. Retrieved from ” https: Retrieved 7 November This page was last edited on 22 Novemberat The robot builder’s bonanza 2nd ed. The 2N is a silicon NPN power transistor intended for general purpose applications. It dztasheet second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.

(PDF) 2N3955 Datasheet download

The 2N remains very popular as a series pass transistor in linear power supplies 22n3955 is still used in for medium- current and datasheey power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.

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By using this site, you agree to the Terms datzsheet Use and Privacy Policy. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. Wikimedia Commons has media related to 2N The art of electronics 2nd ed.

It was produced exclusively by the Czechoslovakian electronics company Tesla. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.

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